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Here we demonstrate the promising tunneling property of electrons across quasi-graphene/PVDF (Polyvinylidene fluoride) through the Coulomb blockade region. Melt-mixing technique is used to prepare such nanocomposite by mixing nanofiller into the polymer matrix. The structure and surface morphology are studied using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) measurements, which show defects oriented in the sample while the binding of matrix with nanofiller remains highly conductive in nature. Tunneling properties of quasi-graphene/PVDF are studied using scanning tunneling microscopy (STM) measurements, which indicate high resistance at the Coulomb blockade region. Potential aspects of quasi-graphene/PVDF as a flexible material for device applications are also discussed.
Link: Our as prepared samples indicates the high resistance at the Coulomb blockade region for the such a type of Nanocomposites for the first time. In addition, it shows the tunneling properties which is highly efficient for the usage in Nanoswitching as well as in Storage Application and is mentioned for the first time to the best of our knowledge. Also, it is highly flexible and shows future potential aspects of using it for the device applications.